Chip carrier with oxidation protection layer

Details Chip carrier with oxidation protection layer Chip carrier with oxidation protection layer

2007-07-24

2007-07-24

Williams, Alexander Oscar (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Configuration or pattern of bonds

C257SE23055, C257SE23145, C257SE23092, C257SE23012, C257SE23124, C257S700000, C257S701000, C257S758000, C257S692000, C257S738000, C257S737000

Reexamination Certificate

active

11022244

ABSTRACT:
A chip carrier comprising a laminated layer and an oxidation protection layer is provided. The oxidation protection layer is a non-electrolytic metallic coating or an organic oxidation protection film on the surface of bonding finger pads or other contacts formed by deploying a simple, fast film-coating technique. Therefore, there is no need to plate a Ni/Au layer on the bonding pads or contacts using expensive electroplating equipment for preventing oxidation and there is no need to fabricate plating lines on the chip carrier or reserve space for laying out the plating lines. Thus, the cost for fabricating the chip carrier is reduced, the effective area of the chip carrier is increased and the electrical performance of the chip carrier is improved.

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