Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-30
2006-05-30
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S239000, C257S414000
Reexamination Certificate
active
07053439
ABSTRACT:
A field effect transistor has a floating gate with an extended portion. A selectively chemoreceptive finger or layer is electrostatically coupled to the extended portion of the floating gate, and induces a voltage on the gate in response to selected chemicals or other conditions affecting the finger. The voltage on the gate modulates current flowing between a source and a drain of the transistor, effectively sensing the presence of the selected chemicals or conditions. In one embodiment, multiple chemoreceptive fingers are electrostatically coupled to the extended portion of the floating gate. In a further embodiment, an array of such field effect transistors provide a sensor for multiple conditions.
REFERENCES:
patent: 4232326 (1980-11-01), Neidig et al.
patent: 4397714 (1983-08-01), Janata et al.
patent: 4437969 (1984-03-01), Covington et al.
patent: 4636827 (1987-01-01), Rudolf
patent: 4728882 (1988-03-01), Stanbro et al.
patent: 5071770 (1991-12-01), Kolesar, Jr.
patent: 5719520 (1998-02-01), Au et al.
patent: 2002/0117659 (2002-08-01), Lieber et al.
Bergveld, P., “A Critical Evaluation of Direct Electrical Protein Detection Methods”,Biosensors&Bioelectronics, 6, (1991), 55-72.
Bergveld, P. , “Development of an Ion-Sensitive Solid-State Device for Neurophysiological Measurements”,IEEE Trans. Biomedical Engineering, BME-17(1), (1970), 70-71.
Boahen, K. A., “The Retinomorphic Approach: Pixel Parallel Adaptive Amplification, Filtering, and Amplification”,In: Neuromorphic Systems Engineering: Neural Networks in Silicon, T.S. Lande, Ed., Boston: Kluwer,(1998), 129-150.
Colapicchioni, C. , et al., “Immunienzymatic Assay Using CHEMFET Devices”,Sensors and Actuators B: Chemical, 4(3-4), (Jun. 1991), 245-250.
Dewa, A. S., et al., “Biosensors”,In: Semiconductor Sensors, Chapter 9, Edited by S.M. Sze. John Wiley and Sons,(1994), 425-472.
Diorio, C. , et al., “A Complementary Pair of Four-Terminal Silicon Synapses”,Analog Integrated Circuits and Signal Processing, 13 (1-2), (1997), 153-166.
Diorio, C. , et al., “A Floating-Gate MOS Learning Array with Locally Computed Weight Updates”,IEEE Transactions on Electron Devices, 44 (12), (Dec. 1997), 2281-2289.
Diorio, C. , et al., “Floating-Gate MOS Synapse Transistors”,In: Neuromorphic Systems Engineering: Neural Networks in Silicon, T.S. Lande, Ed., Boston: Kluwer,(1998), 315-338.
Fragniere, E. , et al., “An Analogue VLSI Model of Active Cochlea”,In; Neuromorphic Systems Engineering: Neural Networks in Silicon, T.S. Lande, Ed., Boston: Kluwer,(1998), 19-48.
Grodzinksy, A. J., et al., “Electrokinetic Separations”,In: Biotechnology: a multi-volume comprehensive treatise, 2nd Ed., vol. 3, H J Rehm; Gerald Reed; A Puhler; P Stadler; H Sahm—Authors; Cambridge : VCH.,(1993), 680-693.
Hasler, Paul , et al., “Adaptive Circuits and Synapses using pFET Floating-Gate Devices”,In: Learning on Silicon: adaptive VLSI neural systems, G. Cauwenberghs and M. Bayoumi, Eds., Boston: Kluwer,(1999), 33-65.
Hasler, P. , et al., “Floating-Gate Devices: They Are Not Just for Digital Memories Anymore”,ISCAS'99. Proceedings of the 1999 IEEE International Symposium on Circuits and Systems VLSI, (Jun. 1999), 388-391.
Hermans, E.C. M., “CO, CO/sub 2/CH/sub 4/ and H/sub 2O sensing by polymer covered interdigitated electrode structures”,Sensors and Actuators, 5(3), (May 1984), 181-186.
Kan, E. C., et al., “Si Fleas: Technology Demonstration of Functional Modules in Submillimeter Autonomous Microsystems”,Invited Talk, Ninth Foresight Conference on Molecular Nanotechnology, Santa Clara, CA,(Nov. 9-11, 2001).
Kruger, W. F., et al., “An Adaptive WTA Using Floating-Gate Technology”,In; Advances in Neural Information Processing Systems9, M.C. Mozer, et al, Eds., London: MIT Press,(1997), 720-726.
Leman, E S., et al., “Characterization of the nuclear matrix proteins in a transgenic mouse model for prostate cancer”,Journal of Cellular Biochemistry; 86(2), (2002), 203-212.
Liu, Z. , et al., “Eluding metal contamination in CMOS front-end fabrication by nanocrystal formation process”,Self-Assembly Processes in Materials. Symposium(Mater. Res. Soc. Proceedings, vol. 707, (2002), 199-204.
Liu, S C., et al., “Homeostasis in a Silicon Integrate-and-Fire Neuron”,In: Advances in Neural Information Processing Systems 13, T.K. Leen, et al., Eds., London: MIT Press,(2001), 727-733.
Liu, Zengtao , et al., “Novel Electrostatic Repulsion Forces in MEMS Applications by Nonvolatile Charge Injection”,The Fifteenth IEEE International Conference on Micro Electro Mechanical Systems, (2002), 598-601.
Liu, Zengtao , et al., “Process and device characteristics of self-assembled metal nano-crystal EEPROM”,Superlattice and Microstructures, 28 (5-6), (Nov. 2000), 393-399.
Ma, T. P., “Making Silicon Nitride film a Viable Gate Dielectric”,IEEE Transactions On Electron Devices, 45(3), (Mar. 1998), 680-690.
Mead, C. , “Neuromorphic Electronic Systems”,Proceedings of the IEEE,78(10), (Oct. 1990), 1629-1636.
Minch, Bradley A., et al., “A Floating-Gate Technology for Digital CMOS Processes”,ISCAS '99. Proceedings of the 1999 IEEE International Symposium on Circuits and Systems, (Jun. 1999), 400-403.
Minch, Bradley A., “A Folded Floating-Gate Differential Pair for Low-Voltage Applications”,The 2000 IEEE International Symposium on Circuits and Systems, Proceedings. ISCAS 2000 Geneva. vol.: 4, (May 2000), 253-256.
Minch, B. A., et al., “A Silicon Axon”,In: Advances in neural information processing systems 7, Authors—Gerald Tesauro; David S Touretzky; Todd Leen; Cambridge, Mass. : MIT Press,(1995), 739-746.
Minch, Bradley A., et al., “A vMOS Soft-Max Current Mirror”,1995 IEEE International Symposium on Circuits and Systems, ISCAS '95., vol.: 3, (May 1995), 2249-2252.
Minch, Bradley A., “Evolution of a Folded Floating-Gate Differential Pair”,Proceedings of the 43rd IEEE Midwest Symposium on Circuits and Systems, vol. 3, (May 2000), 1052-1056.
Minch, B. A., “Multiple-Input Translinear Element Log-Domain Filters”,IEEE Transactions on Circuits and Systems II, 48(1), (Jan. 2001), 29-36.
Minch, B. A., et al., “Multiple-Input Translinear Element Networks”,IEEE Transactions on Circuits and Systems II, 48(1), (Jan. 2001), 20-28.
Minch, B. A., et al., “Translinear Circuits Using Subthreshold Floating-Gate MOS Transistors”,Analog Integrated Circuits and Signal Processing, 9(2), (1996), 167-179.
Neuberger, R. , et al., “High-electron mobility AIGaN/GaN transistors (HEMTs) for fluid monitoring applications”,Physica Status Solidi A, 185(1), (May 2001), 85-89.
Rabaey, Jan M., et al., “Designing Memory and Array Structures”,In: Digital Integrated Circuits: a design perspective, Upper Saddle River, N.J. : Prentice Hall,(1996), 551-628.
Sarpeshkar, R. , et al., “A Low-Power Wide-Dynamic-Range Analog VLSI Cochlea”,In: Neuromorphic Systems Engineering: Neural Networks in Silicon, T.S. Lande, etal, Eds. Boston: Kluwer,(1998), 49-104.
Schalwig, J. , et al., “Goup-III-nitride based gas sensing devices”,Physica Status Solidi A, 185(1), (May 2001), 39-45.
Shepherd, Gordon M., et al., “Olfactory Bulb”,In: The Synaptic Organization of the Brain, G.M. Shepherd, Ed. 3rd ed., New York: Oxford University Press,(1990), 133-169.
Shibata, T. , et al., “A Functional MOS Transistor Featuring Gate-Level Weighted Sum and Threshold Operations”,IEEE Transactions on Electron Devices, 39(6), (1992), 1444-1455.
Siu, W. M., et al., “Basic Properties of the Electrolyte-SiO2-Si System: Physical and Theoretical Aspects”,IEEE Transactions on Electron Devices, ED-26(11), (1979), 1805-1815.
Steiner, F. P., et al., “Polymer Coate
Kan Edwin
Minch Bradley A.
Schwegman, Lundberg, Woessner and Kluth P.A.
Wilson Allan R.
LandOfFree
Chemoreceptive semiconductor structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Chemoreceptive semiconductor structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemoreceptive semiconductor structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3596329