Chemically treated photoresist for withstanding ion bombarded pr

Details Chemically treated photoresist for withstanding ion bombarded pr Chemically treated photoresist for withstanding ion bombarded pr

1997-11-26

1999-11-09

Baxter, Janet

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

556410, 556420, G03C 173, G03F 7075

Patent

active

059811439

ABSTRACT:
A photosensitive photoresist material which is effective for use as an ion etch barrier layer after patterning. The photoresist composition includes the reaction product of a compound having the general formula R.sub.1 --COO--(CH.sub.2).sub.n --O--R.sub.2 and a silylating agent.

REFERENCES:
patent: 4497891 (1985-02-01), Kaplan et al.
patent: 4689289 (1987-08-01), Crivello
patent: 5091290 (1992-02-01), Rolfson
patent: 5370908 (1994-12-01), O'Connor et al.
patent: 5688634 (1997-11-01), Mixon et al.
patent: 5741629 (1998-04-01), Chandross et al.

Affiliated with

Also associated with

Rating

Chemically treated photoresist for withstanding ion bombarded pr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chemically treated photoresist for withstanding ion bombarded pr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemically treated photoresist for withstanding ion bombarded pr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1453675