Chemically treated photoresist for withstanding ion bombarded pr

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430954, 430327, G03C 176

Patent

active

060459786

ABSTRACT:
A photosensitive photoresist material which is effective for use as an ion etch barrier layer after patterning. The photoresist composition includes the reaction product of a compound having the general formula R.sub.1 --COO--(CH.sub.2).sub.n --O--R.sub.2 and a silylating agent.

REFERENCES:
patent: 4497891 (1985-02-01), Kaplan et al.
patent: 4689289 (1987-08-01), Crivello
patent: 5091290 (1992-02-01), Rolfson
patent: 5370908 (1994-12-01), O'Connor et al.
patent: 5688634 (1997-11-01), Mixon et al.
patent: 5741629 (1998-04-01), Chandross et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Chemically treated photoresist for withstanding ion bombarded pr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chemically treated photoresist for withstanding ion bombarded pr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemically treated photoresist for withstanding ion bombarded pr will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-363673

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.