Chemically and electrically stabilized polymer films

Details Chemically and electrically stabilized polymer films Chemically and electrically stabilized polymer films

2007-07-03

2007-07-03

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S622000, C438S623000, C438S624000, C438S627000, C438S643000, C438S644000, C257S767000, C257S751000, C257SE21261, C257SE21264

Reexamination Certificate

active

11020422

ABSTRACT:
A method of stabilizing a poly(paraxylylene) dielectric thin film after forming the dielectric thin film via transport polymerization is disclosed, wherein the method includes annealing the dielectric thin film under at least one of a reductive atmosphere and a vacuum at a temperature above a reversible solid phase transition temperature of the dielectric film to convert the film from a lower temperature phase to a higher temperature phase, and cooling the dielectric thin film at a sufficient rate to a temperature below the solid phase transition temperature of the dielectric thin film to trap substantial portions of the film in the higher temperature phase.

REFERENCES:
patent: 6066516 (2000-05-01), Miyasaka
patent: 6140456 (2000-10-01), Lee et al.
patent: 6358863 (2002-03-01), Desu et al.

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