Chemical vapor deposition using organometallic precursors

Details Chemical vapor deposition using organometallic precursors Chemical vapor deposition using organometallic precursors

2005-08-30

2005-08-30

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S780000, C438S781000, C438S785000

Reexamination Certificate

active

06936549

ABSTRACT:
A multi-component layer is deposited on a semiconductor substrate in a semiconductor process. The multi-component layer may be a dielectric layer formed from a gaseous titanium organometallic precursor, reactive silane-based gas and a gaseous oxidant. The multi-component layer may be deposited in a cold wall or hot wall chemical vapor deposition (CVD) reactor, and in the presence or absence of plasma. The multi-component layer may also be deposited using other processes, such as radiant energy or rapid thermal CVD.

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