Chemical vapor deposition technique for depositing titanium sili

Details Chemical vapor deposition technique for depositing titanium sili Chemical vapor deposition technique for depositing titanium sili

1992-08-07

1993-08-31

Pianalto, Bernard

Coating processes

Electrical product produced

Metallic compound coating

4272552, 427294, 437225, B05D 308

Patent

active

052407390

ABSTRACT:
Disclosed is a chemical vapor deposition (CVD) method of providing a conformal layer of titanium silicide atop a semiconductor wafer within a chemical vapor deposition reactor. Such includes, a) positioning a wafer within the CVD reactor; b) injecting selected quantities of gaseous TiCl.sub.4, a gaseous compound of the formula Si.sub.n H.sub.2n+2 where "n" is an integer greater than or equal to 2, and a carrier gas to within the reactor; and c) maintaining the reactor at a selected pressure and a selected temperature which are effective for reacting the TiCl.sub.4 and Si.sub.n H.sub.2n+2 to deposit a film on the wafer, the film comprising a titanium silicide.

REFERENCES:
patent: 4568565 (1986-02-01), Gupa et al.
Ilderem, V. et al., "Optimized Deposition Parameters for Low Pressure Chemical Vapor Deposited Titanium Silicide", vol. 135, No. 10, pp. 2590-2596 (Feb. 1988).

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