Chemical vapor deposition reactor with infrared reflector

Details Chemical vapor deposition reactor with infrared reflector Chemical vapor deposition reactor with infrared reflector

1979-02-09

1981-08-18

Goldberg, Elliot

Electric heating

Metal heating

Of cylinders

219 1075, 118724, 118620, H05B 642, C23C 1308

Patent

active

042848679

ABSTRACT:
The reactor includes an R.F. induction coil, connected to a power supply, and located in proximity to the deposition enclosure. The coil radiates energy, a portion of which is converted by a susceptor situated in the enclosure into heat which is applied to the surface of the wafer adjacent thereto. A concave metallic infrared reflector redirects some of the normally unused radiated energy, in the form of radiant heat, onto the external surface of the wafer to promote even heating and, thus, reduce temperature gradients in the wafer thereby eliminating detrimental dislocation motion or slip. Moreover, the input power requirements of the system are reduced. Preferably, the enclosure is cooled by spraying de-ionized liquid thereon to eliminate unwanted deposition of dopants on the interior surface thereof.

REFERENCES:
patent: 2598286 (1952-05-01), Mulder et al.
patent: 3067278 (1962-12-01), Albright
patent: 3160517 (1964-12-01), Jenkin
patent: 3301213 (1967-01-01), Grochowski et al.
patent: 3699298 (1972-10-01), Briody
patent: 3845738 (1974-11-01), Berkman et al.
patent: 4115163 (1978-09-01), Gorina et al.

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