Chemical vapor deposition reactor system and integrated circuit

Details Chemical vapor deposition reactor system and integrated circuit Chemical vapor deposition reactor system and integrated circuit

1996-02-14

1997-07-15

Pianalto, Bernard

Stock material or miscellaneous articles

Composite

Of metal

118 50, 118697, 118723E, 118723VE, 118725, 118728, 427 97, 427 99, 427294, 427314, 427570, 427573, 427578, 428704, B32B 900, B05C 1100

Patent

active

056481756

ABSTRACT:
A method of and apparatus for depositing a silicon oxide layer onto a wafer or substrate is provided. The present method includes introducing into a processing chamber a process gas including silicon, oxygen, boron, phosphorus and germanium to form a germanium doped BPSG oxide layer having a reflow temperature of less than 800.degree. C. Preferred embodiments of the present method are performed in either a subatmospheric CVD or a plasma enhanced CVD processing apparatus.

REFERENCES:
patent: 4799992 (1989-01-01), Rao et al.
patent: 5114530 (1992-05-01), Rao et al.
patent: 5324539 (1994-06-01), Maeda et al.
patent: 5401305 (1995-03-01), Russo et al.
Stephen M. Fisher et al., "Characterizing B-, P-, and Ge-Doped Silicon Oxide Films for Interlevel Dielectrics", Solid State Technology, (Sep. 1993), pp. 55-64.

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