Chemical vapor deposition reactor and process chamber for...

Details Chemical vapor deposition reactor and process chamber for... Chemical vapor deposition reactor and process chamber for...

2005-05-31

2005-05-31

Hassanzadeh, Parviz (Department: 1763)

Coating apparatus

Gas or vapor deposition

Multizone chamber

C118S715000, C118S733000, C156S345330, C156S345340

Reexamination Certificate

active

06899764

ABSTRACT:
A chemical vapor deposition reactor having a process chamber accommodating a substrate holder for wafers, a first gas flow of reactive gases to process the wafers and a crown-shaped gas-collector surrounding the substrate-holder, wherein said reactor further comprises: a base plate and a cover plate disposed respectively beneath and above the substrate-holder, an outer ring surrounding the gas-collector and touching both the base plate and the cover-plate, and a second flow of non-reactive gases propagating in spaces outside the process chamber limited by the base and cover plates and the outer ring, and said second flow acting as a counter-flow for preventing the first reactive gas flow to exit from the process chamber but through the gas-collector.

REFERENCES:
patent: 4450786 (1984-05-01), Doehler et al.
patent: 4961399 (1990-10-01), Frijlink
patent: 4976217 (1990-12-01), Frijlink
patent: 5788777 (1998-08-01), Burk, Jr.
patent: 6342691 (2002-01-01), Johnsgard et al.
patent: WO 99/42636 (1999-08-01), None

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