Chemical vapor deposition reactor and process

Details Chemical vapor deposition reactor and process Chemical vapor deposition reactor and process

1978-11-14

1980-11-04

Kendall, Ralph S.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 95, 4272553, 118728, 118725, B05D 512, B05C 1300

Patent

active

042320631

ABSTRACT:
Apparatus and process for depositing materials such as Si.sub.3 N.sub.4 and SiO.sub.2 on semiconductor wafers in a hot-wall reactor. A perforated distribution tube is positioned in the reaction chamber, and the wafers are placed inside the tube. Reactant gases are introduced into the chamber outside the tube and pass to the wafers through the openings in the tube.

REFERENCES:
patent: 3222217 (1965-12-01), Grabmaier
patent: 3573096 (1971-03-01), Tombs
patent: 4018183 (1977-04-01), Meuleman
patent: 4018184 (1977-04-01), Nagasawa et al.
patent: 4082865 (1978-04-01), Ban et al.
patent: 4098923 (1978-07-01), Alberti et al.
patent: 4108106 (1978-08-01), Dozier

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