Chemical vapor deposition reactor

Details Chemical vapor deposition reactor Chemical vapor deposition reactor

2006-03-14

2006-03-14

Lund, Jeffrie R. (Department: 1763)

Coating apparatus

Gas or vapor deposition

C118S724000

Reexamination Certificate

active

07011711

ABSTRACT:
A chemical vapor deposition reactor for depositing a thin film on at least a substrate through a reaction between a vertical input reagent gas flow and the at least a substrate is provided, in which a vertical output reagent gas flow is produced after the reaction. The reactor includes a vertical tube, at least a reaction chamber located inside the vertical tube, an input flow baffle located on the at least a reaction chamber, and at least a gas exit installed on the at least a reaction chamber for exhausting the vertical input reagent gas flow and the vertical output reagent gas flow. In addition, the substrate is located at the bottom of the at least a reaction chamber. The provided reactors allow the achievement of more efficient heating process, lower gas consumption and higher growth uniformity than the conventional reactors.

REFERENCES:
patent: 4574093 (1986-03-01), Cox
patent: 4760244 (1988-07-01), Hokynar
patent: 4848273 (1989-07-01), Mori et al.
patent: 5146869 (1992-09-01), Bohannon et al.
patent: 5192370 (1993-03-01), Oda et al.
patent: 5462013 (1995-10-01), Punola et al.
patent: 5498292 (1996-03-01), Ozaki
patent: 5520742 (1996-05-01), Ohkase
patent: 5578132 (1996-11-01), Yamaga et al.
patent: 5580171 (1996-12-01), Lim et al.
patent: 5685914 (1997-11-01), Hills et al.
patent: 5980632 (1999-11-01), Lyechika
patent: 6055927 (2000-05-01), Shang et al.
patent: 6085689 (2000-07-01), Sandhu et al.
patent: 6086673 (2000-07-01), Molnar
patent: 6144802 (2000-11-01), Kim
patent: 6176925 (2001-01-01), Solomon
patent: 6177292 (2001-01-01), Hong
patent: 6179913 (2001-01-01), Solomon
patent: 6207932 (2001-03-01), Yoo
patent: 6267840 (2001-07-01), Vosen
patent: 6328807 (2001-12-01), Boek et al.
patent: 6332927 (2001-12-01), Inokuchi et al.
patent: 6350666 (2002-02-01), Kyliouk
patent: 6352593 (2002-03-01), Brors et al.
patent: 6514348 (2003-02-01), Miyamoto
patent: 6537418 (2003-03-01), Muller et al.
patent: 6585823 (2003-07-01), Van Wijck
patent: 2001/0018894 (2001-09-01), Chang
patent: 2002/0155713 (2002-10-01), Tsvetkov et al.
patent: 2004/0129213 (2004-07-01), Shreter et al.
patent: 2005/0056222 (2005-03-01), Melnik et al.
patent: 61-251118 (1986-11-01), None

Affiliated with

Also associated with

Rating

Chemical vapor deposition reactor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chemical vapor deposition reactor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical vapor deposition reactor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3560020