Chemical vapor deposition process for producing oxide thin films

Details Chemical vapor deposition process for producing oxide thin films Chemical vapor deposition process for producing oxide thin films

1996-03-20

1998-01-27

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427573, 4272553, 4272555, B05D 306

Patent

active

057120013

ABSTRACT:
The present invention relates to a process for producing crystallographic oriented oxide thin films having an NaCl-type structure, a spinel structure or a Wurtzite structure used as a buffer layer to obtain a functional oxide thin film such as a superconductive oxide thin film and a ferroelectric thin film, and a chemical vapor deposition apparatus used therefor. A rotatable substrate holder is provided in a reaction chamber. The substrate holder, which holds substrates thereunder, includes a substrate heater. The substrate holder is grounded to provide an electrode. Another electrode, which is connected to a high frequency power source, is located opposing the substrate holder in the reaction chamber. At a side wall of the reaction chamber, an exhaust is arranged. In a plasma electric discharge area formed between the substrate holder and the electrode, a material gas supplier is located, having a predetermined tilt angle .theta. with respect to the substrate holder.

REFERENCES:
patent: 4975324 (1990-12-01), Torii et al.
patent: 4976996 (1990-12-01), Monkowski et al.
patent: 5017404 (1991-05-01), Paquet et al.
patent: 5234502 (1993-08-01), Mochizuki et al.
"Thin Films of Magnesium Oxide Prepared by Plasma-Enhanced Chemical Vapour Deposition", by Yu-Wen Zhao et al., Applied Physics A, 54, pp. 451-454, 1992.

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