Chemical vapor deposition process for producing metal carbide or

Details Chemical vapor deposition process for producing metal carbide or Chemical vapor deposition process for producing metal carbide or

1986-08-25

1988-07-12

Pal, Asok

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156613, 156DIG99, 156DIG112, 423411, 423440, C01B 3130, C01B 2106, C30B 7500

Patent

active

047567910

ABSTRACT:
A chemical vapor deposition process for producing single crystal whiskers of metal carbides, nitrides, or carbonitrides involving flushing a reaction chamber including a suitable substrate surface heated to 1025.degree.-1125.degree. C., and flowing reactant gases past the substrate to form whiskers. The reactants comprise a halide of Ti, Zr, Hf, Nb, Ta or W and one or more of nitrogen, ammonia and suitable aliphatic hydrocarbons. The atomic ratio of carbon and/or nitrogen to metal is about 5:1 to 16:1; the volume ratio of hydrocarbon and/or nitrogen and/or ammonia to hydrogen is about 1:50-1:20. The preferred substrate materials are nickel or a high nickel alloy coated with TiC or TiN, or, for carbide whiskers, nickel impregnated graphite. The reactor walls and internal fixtures preferably provide the substrate surfaces. A more efficient batch process and a continuous process for whisker growth are disclosed.

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