Chemical vapor deposition process for fabricating layered superl

Coating processes – Electrical product produced – Metallic compound coating

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4272553, 427314, 4273762, 4273722, 117 94, 117104, 117 88, 437225, B05D 512, C23C 1600, C30B 2814

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056481144

ABSTRACT:
A substrate is prebaked in an oxygen furnace. A thin film of layered superlattice oxide is formed on the substrate by a chemical vapor deposition process. The film is RTP baked to provide grains with a mixed phase of A-axis and C-axis orientation. The film may be treated by ion implantation prior to the RTP bake and oxygen furnace annealed after the RTP bake. An electrode is deposited on the layered superlattice thin film and then the film and electrode are oxygen furnace annealed.

REFERENCES:
patent: 4792463 (1988-12-01), Okada et al.
patent: 4912087 (1990-03-01), Aslam et al.
patent: 4965090 (1990-10-01), Gartner et al.
patent: 5006363 (1991-04-01), Fujii et al.
patent: 5043049 (1991-08-01), Takenaka
patent: 5138520 (1992-08-01), McMillan et al.
patent: 5141917 (1992-08-01), Tanaka et al.
patent: 5146299 (1992-09-01), Lampe, et al.
patent: 5174926 (1992-12-01), Sahagen
patent: 5206213 (1993-04-01), Cuomo et al.
patent: 5206778 (1993-04-01), Larson et al.
patent: 5216572 (1993-06-01), Larson et al.
patent: 5254530 (1993-10-01), Sugimoto et al.
patent: 5258204 (1993-11-01), Wernberg et al.
patent: 5260265 (1993-11-01), Yamazaki
patent: 5262396 (1993-11-01), Yamazaki
patent: 5276010 (1994-01-01), Sasaki
patent: 5278138 (1994-01-01), Ott et al.
patent: 5310990 (1994-05-01), Russell et al.
patent: 5338951 (1994-08-01), Argos, Jr. et al.
patent: 5374578 (1994-12-01), Patel et al.
patent: 5391393 (1995-02-01), Maniar
patent: 5401680 (1995-03-01), Abt et al.
patent: 5406510 (1995-04-01), Mihara et al.
patent: 5439845 (1995-08-01), Watanake et al.
patent: 5478610 (1995-12-01), Desu et al.
patent: 5527567 (1996-06-01), Desu et al.
Lathrop et al "Production of YBa.sub.2 Cu.sub.3 O.sub.7-y Supercond. Thin Films in Situ by High-Pressure Reactive Evaporation and Rapid Thermal Annealing", Appl. Phys. Lett, 51(19), 9 Nov. 1987, pp. 1554-1556.
Yamane et al,"Preparation of Bi-Sr-Ca-Cu-O Films by Chemical Vapor Dep. with Metal Chelate and Alkoxide", Chemistry Letters, 1988 (no month) The Chemical Society of Japan, pp. 1515-1516.
E.M. Purcell Electricity & Magnetism: Berkeley Physics Course-vol. 2, McGraw-Hill Book Co., 1965 (no month) -excerpt pp. 128 & 299.
R.C.Weast, ed. CRC Handbook of Chem. & Phys, 56th ed. 1975(no month), excerpt -p. E-60.
L.A. Wills, et al.; Deposition of Ferroelectric Bi.sub.4 Ti.sub.3 O.sub.12 Thin Films; Extended Abstracts, vol. 90, No. 2, Feb. 1990; p. 781.
P. C. Joshi, et al.; Rapid Thermally Processed Ferroelectric Bi.sub.4 Ti.sub.3 O.sub.12 Thin Films; Journal of Applied Physics, Dec., 1992, No. 11; pp. 5517-5519.
Takuma Katayama, et al.; "Photo-CVD of Ferroelectric Pb(Zr,Ti)O.sub.3 Thin Films" no date, no journal.
G.A. Smolenskii, et al.; Ferroelectrics and Related Materials; vol. 3 of a Series of Books, Chapter 15 no date.
G.A. Smolenskii, et al.; "Ferroelectrics of the Oxygen-Octahedral Type With Layered Structure"; Soviet Physics-Solid State, vol. 3, No. 3; Sep. 1961.
E.C. Subbarao; "Ferroelectricity in Mixed Bismuth Oxides With Layer-Type Structure"; 1960 no Journal no month.
J. Gopalakrishnan, et al.; "A Homologous Series of Reccurent Intergrowth Structures of the Type Bi.sub.4 A.sub.m+n-2 B.sub.m+n O.sub.3(m+n)+6 Formed by Oxides of the Aurivillius Family"; Journal of Solid State Chemistry 55, 101-105; 1984 no month.
P.C. Joshi, et al.; "Structural and optical properties of ferroelectric Bi.sub.4 Ti.sub.3 O.sub.12 thin films by sol-gel technique";published Nov. 1991 no Journal.
Shu-Yau Wu; "A New Ferroelectric Memory Device, Metal-Ferroelectic-Semiconductor Transistor"; IEEE Transactions on Electron Devices, vol. ED.-21, No. 8; Aug. 1974.
B.S. Kwak, et al.; "Metalorganic chemical vapor deposition of PbTiO.sub.3 thin films"; Appl. Phys. Lett. 53; Oct. 31, 1988.
Takashi Nakamura, et al.; "Preparation of Bi.sub.4 Ti.sub.3 O.sub.12 Thin Film by MOCVD"; May 1993 Jap.-no trans.
Masaru Shimizu, et al.; "Preparation of PbTiO.sub.3 Thin Films by Photo-MOCVD"; Sep. 1992 no Journal.
Takuma Katayama, et al.; Photo-MOCVD of PbTiO.sub.3 thin films; Journal of Crystal Growth; 1991 (no month) vol. 115 pp. 289-293.
Takuma Katayama, et al.; "Growth and Properties of PbTiO.sub.3 Thin Films by Photoenhanced Chemical Vapor Deposition"; Japanese Journal of Applied Physics, Sep. 1991; vol. 30, No. 9B, p. 2189-2192.
M.J. Cooke; Semiconductor Devices; 1990; Prentice Hall pp. 196-198.
Masaru Shimizu et al.; "Compositional Control of Ferroelectric Pb(Zr,Ti)O.sub.3 Thin Films By Reactive Sputtering and MOCVD" no date, no Journal.
Takashi Nakamura, et al.; Preparation of C-Axis-Oriented Bi.sub.4 Ti.sub.3 O.sub.12 Thin Films by Metalorganic Chemical Vapor Deposition; Sep. 1993; Jpn. J. Appl. Phys. vol. 32 (1993) pp. 4086-4088, Part 1, No. 9B.
P.C. Van Buskirk, et al.; MOCVD Growth of BaTiO.sub.3 in an 8" Single-Wafer CVD Reactor; 8th Int. Symp. Appl. Ferro. Proc., Greenville, SC, Sep. 1992.
C.J. Brierley, et al.; The Growth of Ferroelectric Oxides by MOCVD; Ferroelectrics, 1989, vol. 91, pp. 181-192 no month.
Gregory T. Stauf, et al.; Buffer Layers for Ferroelectric-Based Infra-Red Detectors on Si Grown by a Novel CVD Method; 1993 Spring MRS; Apr. 13-16, San Francisco.
Jiming Zhang, et al.; Single Liquid Source Plasma Enhanced Metalorganic Chemical Vapor Deposition of High-Quality YBa.sub.2 Cu.sub.3 O.sub.7-x Thin Films; App. Phys. Lett.; 61, 2884; 1992 (month not given, but after Jul.).
Jiming Zhang, et al.; Plasma Enhanced Metalorganic Chemical Vapor Deposition of Conductive Oxide Electrodes for Ferroelectric BaTiO.sub.3 Capacitors; Materials Research Society Symposium Proceedings, vol. 310, pp. 249-254 1993, no month.

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