Coating processes – Coating by vapor – gas – or smoke – Metal coating
Patent
1997-05-16
2000-12-05
Beck, Shrive
Coating processes
Coating by vapor, gas, or smoke
Metal coating
427253, 42725528, 42725539, C23C 1614
Patent
active
06156382&
ABSTRACT:
A multiple step chemical vapor deposition process for depositing a tungsten layer on a substrate. A first step of the deposition process includes a nucleation step in which WF.sub.6 and SiH.sub.4 are introduced into a deposition chamber. Next, the flow of WF.sub.6 and SiH.sub.4 are stopped and diborane is introduced into the chamber for between 5-25 seconds. Finally, during a bulk deposition step, the WF.sub.6 is reintroduced into the chamber along with H.sub.2 and B.sub.2 H.sub.6 flows to deposit a tungsten layer on the substrate. In a preferred embodiment, the bulk deposition step also introduces nitrogen into the process gas.
REFERENCES:
patent: 4699805 (1987-10-01), Seelback et al.
patent: 4957775 (1990-09-01), Black et al.
patent: 5028565 (1991-07-01), Chang et al.
patent: 5043299 (1991-08-01), Chang et al.
patent: 5250467 (1993-10-01), Somekh et al.
patent: 5306666 (1994-04-01), Izumi
patent: 5328722 (1994-07-01), Ghanayem et al.
patent: 5342652 (1994-08-01), Foster et al.
patent: 5407698 (1995-04-01), Emesh
patent: 5433975 (1995-07-01), Roberts et al.
patent: 5769951 (1998-06-01), van de Ven et al.
patent: 5795824 (1998-08-01), Hancock
Takayuki Ohba et al., "Selective CVD Tungsten Silicide for VLSI Applications," International Electron Devices Meeting, Washington, D.C. Dec. 6-9, 1987, pp. 213-216. Dec. 1987.
Takayuki Ohba, "Advanced Multilevel Metallization Technology," Applied Surface Science, 91 pp. 1-11, (1995).
T. Hara et al., "Low Resistivity Tungsten Film Using Diborane Reduction," Conference Proceedings ULSI-1X-1994 Materials Research Society-San Diego, CA Oct. 5-7, 1993, pp. 353-358, Oct. 1993.
Takayuki Ohba et al., "Chemical Vapour Deposition of Tungsten by the Reduction of WF.sub.6 Using Si, SiH.sub.4, Si.sub.2 H.sub.6, Si.sub.3 H.sub.8, B.sub.2 H.sub.6, PH.sub.3,and H.sub.2," J. Instn. Electronics and Telecom. Engrs., vol. 37, no. 2, pp. 212-219, (1991).
Ghanayem Steve
Maeda Yuji
Ohtsuka Keiichi
Rajagopalan Ravi
Yamazaki Manabu
Applied Materials Inc.
Beck Shrive
Chen Bret
LandOfFree
Chemical vapor deposition process for depositing tungsten does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Chemical vapor deposition process for depositing tungsten, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical vapor deposition process for depositing tungsten will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-959281