Chemical vapor deposition of metal oxide films from reaction pro

Coating processes – Coating by vapor – gas – or smoke – Base includes an inorganic compound containing silicon or...

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427108, 427109, 4271263, 4272481, C23C 1600, B05D 512

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active

052582043

ABSTRACT:
Thin, uniform films of complex metal oxides are deposited by chemical vapor deposition onto a substrate by vaporizing a single source precursor, which is the reaction product of a metal M' beta-diketonate and a metal M" alkoxide, where metal M' is Li, Na, K, Ba, Mg, Ca, Sr, or Pb, and metal M" is V, Nb, Ta, or Ti, and contacting the vapor with the substrate at a temperature sufficiently high to decompose the precursor and form an M'M" metal oxide. Alternatively, compounds in which a M" metal is attached to a beta-diketonate, and an M' metal is attached to an alkoxide, are used to form the reaction product vapor precursor.

REFERENCES:
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patent: 4993361 (1991-02-01), Unvala
patent: 5081280 (1991-09-01), Hung
"Preparation of Crystalline LiNbO.sub.3 Films With Preferred Orientation by Hydrolysis of Metal Alkoxides", Advanced Ceramic Materials, vol. 3, No. 5, 1988, pp. 503 et seq.
B. Curtis and H. Brunner, "The Growth of Thin Films of Lithium Niobate by Chemical Vapor Deposition", Mat. Res. Bull., vol. 10, pp. 515-520, 1975.
Methrotra et al., "Alkali-metal Hexa-alkoxides of Niobium and of Tantalum", J. Chem. Soc., 1968, pp. 2673-2676.
"Metal Alkoxides as Precursors for Electronic and Ceramic Materials", Bradley, Chem. Review 1989, vol. 89, pp. 1317-1322.

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