Stock material or miscellaneous articles – Web or sheet containing structurally defined element or... – Composite having voids in a component
Patent
1998-06-22
2000-04-25
McAvoy, Ellen M.
Stock material or miscellaneous articles
Web or sheet containing structurally defined element or...
Composite having voids in a component
4283191, 427573, 427574, 427579, 427237, 427238, 4272553, 427294, 427314, B05D 306
Patent
active
060542063
ABSTRACT:
A process for producing low-density, porous silica films in a vacuum environment is provided. The films are advantageous for use as low dielectric constant insulating materials in semiconductor devices. In a first step, an organic-group-containing silica precursor is deposited on a semiconductor substrate in a chemical vapor deposition reactor. In a second step, the organic groups are removed by heating in a furnace in an oxidizing environment or by exposure to an oxidizing plasma, thereby creating a low density silica film.
REFERENCES:
patent: 4872947 (1989-10-01), Wang et al.
patent: 4987102 (1991-01-01), Nguyen et al.
patent: 5354611 (1994-10-01), Arthur et al.
patent: 5360646 (1994-11-01), Morita
patent: 5362526 (1994-11-01), Wang et al.
patent: 5426076 (1995-06-01), Moghadam
patent: 5470802 (1995-11-01), Gnade et al.
patent: 5569058 (1996-10-01), Gnade et al.
patent: 5686031 (1997-11-01), Coronado et al.
patent: 5840631 (1998-11-01), Kubo et al.
D. Bulla, et al., "Method to obtain TEOS PECVD Silicon Oxide Thick Layers for Optoelectronics devices Application", Laboraterio de Sistemas Integraveis da EPUSP, 4 pages, (no date cited).
T. Ramos, et al., "Nanoporous Silica for Low K Dielectrics", Mat. Res. Symp. Proc., vol. 443, pp. 91-98 (1997).
M. Jo, et al., "Evaluation of SiO.sub.2 aerogel thin film with ultra low dielectric constant as an intermetal dielectric", Microelectronic Engineering 33, pp. 343-348 (1997).
L. Hrubesh, "Silica Aerogel: An Intrinsically Low Dielectric Constant Material", Mat. Res. Soc. Symp. Proc., vol. 381, pp. 267-272 (1995).
P. Brusch, et al., "Electrical and Infrared Dielectrical Properties of Silica Aerogels and of Silica-Aerogel-Based Composites", Appl. Phys. A 57, pp. 329-337 (Jun. 1993).
McAvoy Ellen M.
Novellus Systems Inc.
Saxon Roberta P.
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