Chemical vapor deposition of iron, ruthenium, and osmium

Coating processes – Direct application of electrical – magnetic – wave – or... – Photoinitiated chemical vapor deposition

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427252, 4272553, 427294, 427585, 427586, B05D 306

Patent

active

053147278

ABSTRACT:
A method is provided for forming films comprising Fe, Ru or Os employing the techniques of chemical vapor deposition to decompose a vapor comprising an organometallic compound of the formula (a): (CO).sub.4 ML or (b): M.sub.2 [.mu.-.eta.:.eta..sup.4 -C.sub.4 ](CO).sub.6 ; wherein L is a two-electron donor ligand and each R is H, halo, OH, alkyl, perfluoroalkyl or aryl; so as to deposit a coating comprising one or more of said metals on the surface of a substrate.

REFERENCES:
patent: 3352707 (1967-11-01), Pickard
patent: 3914515 (1975-10-01), Kane et al.
patent: 3978272 (1976-08-01), Donley
patent: 4250210 (1981-02-01), Crosby et al.
patent: 4340617 (1982-07-01), Deutsch et al.
patent: 4666742 (1987-05-01), Takakura et al.
patent: 4713258 (1987-12-01), Umemura
patent: 4721631 (1988-01-01), Endo et al.
patent: 4868005 (1989-09-01), Ehrlich et al.
patent: 4876112 (1989-10-01), Kaito et al.
patent: 4923717 (1990-05-01), Gladfelter et al.
patent: 4927670 (1990-05-01), Erbil
patent: 4992305 (1991-02-01), Erbil
patent: 5005519 (1991-04-01), Egermeier et al.
patent: 5022905 (1991-06-01), Grundy et al.
C. E. Morosanu, in "Thin Films by Chemical Vapor Deposition," Elsevier, N (1990) at pp. 42-54, 460-475 (no month).
W. Kern et al., in "Thin Film Processes," J. L. Vossen et al., eds., Academic Press, N.Y. (1978) (no month).
D. E. Trent et al., Inorg. Chem., 3, 1057 (1964) (no month).
S. Lehwald et al., Thin Solid Films, 21, 523 (1974) (no month).
J. C. Vigui et al., J. Electrochem. Soc., 122, 585 (1975) (no month).
M. L. Green et al., J. Electrochem. Soc., 132, 2677 (1985) (no month).
R. G. Vadimsky et al., J. Electrochem. Soc. 126, 2017 (1979) (no month).
D. R. Rolison et al., J. Electrochem. Soc., 126, 407 (1979) (no month).
S. S. P. Parkin et al., Phys. Rev. Letters, 64, 204 (1990) (no month).
J. A. Long et al., J. Crystal Growth, 71, 42 (1986) (no month).
J. P. Collman et al., in "Principles and Applications of Organotransition Metal Chemistry," University Science Books, Mill Valley, Calif. (1980) at pp. 51-175 (Table of Contents only) (no month).
R. G. Ball et al., Organometallics, 6, 1918 (1987) (no month).
M. R. Gagn et al., Organometallics, 7, 561 (1988) (no month).
Comprehensive Organometallic Chemistry, vol. 4, G. Wilkinson et al., eds., Pergamon Press, Oxford (1982) (Table of Contents, pp. 243-244, 331, 377, 513, 691-692, 821, 967-968) (no month).
F. W. Grevels et al., J. Am. Chem. Soc., 103, 4069 (1981) (no month).
W. J. Carter et al., Inorg. Chem., 21, 3955 (1982) (no month).
M. Green et al., J. Chem. Soc., Dalton Trans., 939 (1975) (no month).
I. P. Herman, Chem. Rev., 89, 1323 (1989) (no month).
A. N. Nesmeyanov et al., J. Organomet. Chem., 47, 1 (1973) (no month).
T. M. Besmann et al., Science, 253, 1104 (1991) (no month).
J. Elizinga et al., J. Org. Chem., 45, 3957 (1980) (no month).
S. B. Butts et al., J. Organomet. Chem., 169, 191 (1979) (no month).
G. Dettlaf et al., J. Organomet. Chem., 108, 213 (1976) (no month).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Chemical vapor deposition of iron, ruthenium, and osmium does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chemical vapor deposition of iron, ruthenium, and osmium, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical vapor deposition of iron, ruthenium, and osmium will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1971587

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.