Chemical vapor deposition of high conductivity, adherent...

Details Chemical vapor deposition of high conductivity, adherent... Chemical vapor deposition of high conductivity, adherent...

2007-10-23

2007-10-23

Meeks, Timothy (Department: 1762)

Coating processes

Coating by vapor, gas, or smoke

C427S250000, C427S255280, C427S255310

Reexamination Certificate

active

10803750

ABSTRACT:
A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.

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patent: WO - 00/15885 (2000-03-01), None
Papadatos, Filippos, et al., Characterization of Ruthenium and Ruthenium Oxide Thin Films deposited by Chemical Vapor Deposition for CMOS Gate . . . , Mat. Res. Soc. Symp. Proc., 2003, pp. N3.3.1-N3.3.6, vol. 745.

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