Chemical vapor deposition of chalcogenide materials via...

Coating processes – With post-treatment of coating or coating material

Reexamination Certificate

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C427S255280, C427S248100, C427S255310, C427S255290, C427S532000, C427S402000

Reexamination Certificate

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07858152

ABSTRACT:
A chemical vapor deposition (CVD) process for preparing electrical and optical chalcogenide materials. In a preferred embodiment, the instant CVD-deposited materials exhibit one or more of the following properties: electrical switching, accumulation, setting, reversible multistate behavior, resetting, cognitive functionality, and reversible amorphous-crystalline transformations. In one embodiment, a multilayer structure, including at least one layer containing a chalcogen element, is deposited by CVD and subjected to post-deposition application of energy to produce a chalcogenide material having properties in accordance with the instant invention. In another embodiment, a single layer chalcogenide material having properties in accordance with the instant invention is formed from a CVD deposition process including three or more deposition precursors, at least one of which is a chalcogen element precursor. Preferred materials are those that include the chalcogen Te along with Ge and/or Sb.

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patent: 5492725 (1996-02-01), Gordon
patent: 6011757 (2000-01-01), Ovshinsky
patent: 6519573 (2003-02-01), Shade et al.
patent: 6984591 (2006-01-01), Buchanan et al.
patent: 7161167 (2007-01-01), Johnson
patent: 2003/0001229 (2003-01-01), Moore et al.
patent: 2002117574 (2002-04-01), None

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