Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Reexamination Certificate
2006-11-14
2006-11-14
Meeks, Timothy (Department: 1762)
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
C427S255230, C427S255310
Reexamination Certificate
active
07135207
ABSTRACT:
Provided is a method for fabricating a metal oxide thin film in which a metal oxide generated by a chemical reaction between a first reactant and a second reactant is deposited on the surface of a substrate as a thin film. The method involves introducing a first reactant containing a metal-organic compound into a reaction chamber including a substrate; and introducing a second reactant containing alcohol. Direct oxidation of a substrate or a deposition surface is suppressed by a reactant gas during the deposition process, as it uses alcohol vapor including no radical oxygen as a reactant gas for the deposition of a thin film. Also, since the thin film is deposited by the thermal decomposition, which is caused by the chemical reaction between the alcohol vapor and a precursor, the deposition rate is fast. Particularly, the deposition rate is also fast when a metal-organic complex with β-diketone ligands is used as a precursor. Further, a thin film with low leakage current can be obtained as the metal oxide thin film fabrication method using a chemical vapor deposition or atomic layer deposition method grows a thin film with fine microstructure.
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Notice to Submit Response, by the Korean Patent Office on Apr. 30, 2004, Application No. 10-2002-0018026
Cho Young-jin
Lee Jung-hyun
Min Yo-sep
Buchanan & Ingersoll & Rooney PC
Meeks Timothy
Samsung Electronics Co,. Ltd.
Sellman Cachet I.
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