Chemical vapor deposition method and apparatus therefore

Details Chemical vapor deposition method and apparatus therefore Chemical vapor deposition method and apparatus therefore

1994-05-02

1995-05-30

Bueker, Richard

Coating processes

Coating by vapor, gas, or smoke

4272551, 4272552, 118726, 261 62, 261 443, 261DIG65, 137605, 392396, 251331, C23C 1600

Patent

active

054199247

ABSTRACT:
Fixed amounts of a liquid source for a chemical vapor deposition process is supplied continuously from a source tank and through a liquid mass flow controller to a three-way valve. Inside the three-way valve, the liquid source is evaporated to generate a source gas by contacting a high-temperature carrier gas which flows therethrough and becomes mixed with the source gas. The gas mixture thus generated is supplied into a process chamber for a chemical vapor deposition process. The carrier gas may be heated by a gas heater before entering the three-way valve. Alternatively, the three-way valve may be enclosed inside a thermostatic container, the carrier gas being heated inside the container.

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