Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1997-10-28
2000-08-29
King, Roy V.
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427534, 4272498, 118723E, 118728, B05D 306, C23C 1600
Patent
active
061105414
ABSTRACT:
The present invention relates to a CVD apparatus for highly textured diamond film formation and a method for forming a highly textured diamond film on the surface of a silicone substrate by generating a high density plasma so that each diamond film grain can have the same orientation as the substrate. The present inventors developed an improved chemical vapor deposition apparatus and a method for highly textured diamond film formation, on the ground that the nucleation density having a heteroepitaxy relation with a silicone substrate can be increased by modifying the substrate support and by generating a high density plasma right on the substrate while subjecting the whole substrate to the plasma. In accordance with the present invention, a diamond film which is close to a single crystal and has a heteroepitaxy relation with the crystalline orientation of a substrate can be formed in a simple manner.
REFERENCES:
patent: 5476693 (1995-12-01), Lee et al.
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B. R. Stoner et al., In situ Growth Rate Measurement and Nucleation Enhancement for the Microwave Plasma CVD of Diamond, J. Mater. Res., vol. 7, No. 2, Feb. 1992, pp. 257-260.
B.R. Stoner et al., Characterization of Bias-Enhanced Nucleation of Diamond on silicon by in vacuo Surface Analysis and Transmission Electron Microsopy, Phy. Rev. B, vol. 45, No. 19, May 1992, pp. 11067-11084.
X. Jiang et al., Nucleation and Inital Growth Phase of Diamond Thin Films on (100) Silicon, Phys. Rev. B, vol. 50, No. 12, Sep. 1994, pp. 11067-11084.
Y. Shigesato et al., Emission Spectroscopy During Direct-Biased, Microwave-Plasma Chemical Vapor Deposition of Diamond, Appl. Phys. Lett., vol. 63, No. 3, Jul. 1993, pp. 314-316.
Han Young-Soo
Kim Yoon-Kee
Lee Jai-Young
Yong Yoon-Jung
King Roy V.
Korea Advanced Institute of Science and Technology
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