Chemical vapor deposition manifold

Details Chemical vapor deposition manifold Chemical vapor deposition manifold

1997-07-11

2000-02-15

Breneman, Bruce

Coating apparatus

Gas or vapor deposition

C23C 1600

Patent

active

060247991

ABSTRACT:
A manifold for use in a chemical vapor deposition reactor, optimized for providing effective deposition on a substrate of a specific diameter. The manifold has upstream and downstream faces and is of substantially circular shape, with a central region of the downstream face being perforated by a plurality of upstream-directed bores. The central region is substantially larger than a circle of the specific wafer diameter for which the reactor is optimized. A centrally located plurality of the bores are through-bores or holes to the upstream face of the manifold that define a gas flow path from an upstream gas source to the wafer.

REFERENCES:
patent: 4854263 (1989-08-01), Chang et al.
patent: 5472565 (1995-12-01), Mundt et al.
patent: 5500249 (1996-03-01), Telford et al.
patent: 5595606 (1997-01-01), Fujikawa
patent: 5714031 (1998-02-01), Mundt et al.
patent: 5728223 (1998-03-01), Murakami et al.

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