Chemical vapor deposition hot-trap for unreacted precursor conve

Coating apparatus – Gas or vapor deposition

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118726, 553421, 553422, 55465, 422168, 422169, 422173, 422176, C23C 1600

Patent

active

060996498

ABSTRACT:
A hot trap converts unreacted organic metal-film precursor from the exhaust stream of a CVD process. The converted precursor forms a metal film on the surface of the hot trap, thereby protecting hot vacuum pump surfaces from metal build up. A cold trap downstream from the hot trap freezes effluents from the exhaust stream. The metal captured by the hot trap and the effluents captured by the cold trap may then be recycled, rather than being released as environmental emissions.

REFERENCES:
patent: 3618314 (1971-11-01), Krebs
patent: 5114683 (1992-05-01), Hirase
patent: 5123375 (1992-06-01), Hansen
patent: 5405445 (1995-04-01), Kumada et al.
patent: 5422081 (1995-06-01), Miyagi et al.
patent: 5458862 (1995-10-01), Glawion
patent: 5536321 (1996-07-01), Olsen et al.
patent: 5556473 (1996-09-01), Olson et al.
patent: 5819683 (1998-10-01), Ikeda et al.
Lewis, Richard, Hawley's Condensed Chemical Dictionary, 12th Ed., pp. 309-310, 1993.

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