Chemical vapor deposition (CVD) of cubic silicon carbide SiC

Details Chemical vapor deposition (CVD) of cubic silicon carbide SiC Chemical vapor deposition (CVD) of cubic silicon carbide SiC

1985-07-03

1986-02-04

Terapane, John F.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156662, 252 794, B44C 122, C09K 1306

Patent

active

H00000280

ABSTRACT:
A method for chemical vapor deposition (CVD) of cubic Silicon Carbide (SiC) comprising the steps of etching silicon substrates having one mechanically polished face; depositing a thin buffer layer of cubic SiC formed by reaction between a heated Si substrate and a H.sub.2 C.sub.3 H.sub.8 gas mixture; and depositing SiC on the buffer layer at high temperature using H.sub.2 +C.sub.3 H.sub.8 +SiH.sub.4 mixture.

REFERENCES:
"Chemically-Formed Buffer Layers for Growth of Cubic Silicon Carbide on Silicon Carbide on Silicon Single Crystals" Arrigo Addamiano and Philipp Klein, NRL, Paper presented at ACCG-6 Meeting, Atlantic City, N.J., Jul. 17 and 19, 1984.
"Reproducible Preparation of Cubic-SiC Single Crystals by Chemical Vapor Deposition," Shigehiro Nishino, Hajime Suhara and Hiroyuki Matsunami, Kyoto University, Kyoto 606, Japan, Abstract of the 15th Conference on Solid State Devices & Materials, Tokyo 1983, pp. 317-320.
"Buffer-layer" technique for the growth of single crystal SiC on Si," A. Addamiano and J. A. Sprague, NRL, Wash., DC Appl. Phys. Lett. 44 (5) 3/1/84.

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