Chemical vapor deposition apparatus and methods

Details Chemical vapor deposition apparatus and methods Chemical vapor deposition apparatus and methods

2008-04-08

2008-04-08

Meeks, Timothy (Department: 1792)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

C427S248100, C427S249100, C427S249500

Reexamination Certificate

active

10704315

ABSTRACT:
This invention includes chemical vapor deposition apparatus, methods of chemical vapor depositing an amorphous carbon comprising layer on a substrate, and methods of chemical vapor depositing at least one of Si3N4and SixOyNzon a substrate. In certain implementations, a gas output manifold having at least one gas output to a deposition chamber and at least three gas inputs is utilized. In certain implementations, a remote plasma generator is utilized. In certain implementations, at least one cleaning gas input line feeds the remote plasma generator. In certain implementations, the at least one cleaning gas input line includes an amorphous carbon cleaning gas input and an Si3N4or SixOyNzcleaning gas input.

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