Chemical vapor deposition apparatus

Details Chemical vapor deposition apparatus Chemical vapor deposition apparatus

1999-09-13

2000-07-11

Beck, Shrive

Coating apparatus

Gas or vapor deposition

With treating means

118725, 118715, C23C 1600

Patent

active

060856904

ABSTRACT:
A deposition apparatus has a reactor 11 which is furnished with a reaction gas delivery part 13 and a substrate holder 12 in which reaction gas is delivered from the reaction gas delivery part to a substrate 23 on the substrate holder, and a thin film is deposited on the substrate by means of a chemical reaction which results from supplying HF power to the reaction gas delivery part. Plasma is generated and excites the reaction gas. The gas delivery parts 27, 29, 30, 31 produce a flow of purge gas in the dead space surrounding the reaction gas deliver part. Reaction gas which is liable to be retained in the dead space is driven out by the flow of this gas, and circulation and retention of reaction gas are prevented.

REFERENCES:
patent: 4981722 (1991-01-01), Moller et al.
patent: 4989541 (1991-02-01), Mikoshiba et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5338363 (1994-08-01), Kawata et al.

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