Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2004-03-23
2009-02-10
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S680000, C427S255360, C427S255370
Reexamination Certificate
active
07488683
ABSTRACT:
A method of forming a vapor deposited film of a silicon oxide on the surface of a substrate by holding the substrate to be treated in a plasma-treating chamber, and effecting the treatment with a chemical plasma by feeding an organosilicon compound and an oxidizing gas into the treating chamber, wherein the rate of feeding the oxidizing gas is varied while maintaining constant the rate of feeding the organosilicon compound gas into the plasma-treating chamber during the formation of the vapor deposited film. A chemical vapor deposited film is formed featuring excellent adhesiveness, softness, flexibility, oxygen-barrier property and water-barrier property.
REFERENCES:
patent: 5718967 (1998-02-01), Hu et al.
patent: 6485564 (2002-11-01), Liu et al.
patent: 2003/0044552 (2003-03-01), Komada
patent: 2004/0076836 (2004-04-01), Beldi et al.
patent: 0 762 151 (1997-03-01), None
patent: 0762151 (1997-03-01), None
patent: 1 561 840 (2005-08-01), None
patent: 6-212430 (1994-08-01), None
patent: 9-68601 (1997-03-01), None
patent: 11-309815 (1999-11-01), None
patent: 2000-255579 (2000-09-01), None
patent: 2003-276111 (2003-09-01), None
patent: 02/10473 (2002-02-01), None
Supplementary European Search Report of EPA 04 72 2715 dated Dec. 19, 2006.
Hosono Hiroko
Ieki Toshihide
Inagaki Hajime
Kobayashi Akira
Kurashima Hideo
Picardat Kevin M
Sughrue & Mion, PLLC
Toyo Seikan Kaisha Ltd.
LandOfFree
Chemical vapor deposited film based on a plasma CVD method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Chemical vapor deposited film based on a plasma CVD method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical vapor deposited film based on a plasma CVD method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4070199