Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Reexamination Certificate
2011-01-04
2011-01-04
Walke, Amanda C. (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
C430S273100, C430S311000, C430S312000, C430S317000, C430S318000, C430S322000, C430S330000, C430S331000
Reexamination Certificate
active
07862982
ABSTRACT:
A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line. The invention also comprises a product produced by this process.
REFERENCES:
patent: 4591547 (1986-05-01), Brownell
patent: 5741625 (1998-04-01), Bae et al.
patent: 5942369 (1999-08-01), Ota et al.
patent: 6015650 (2000-01-01), Bae
patent: 6180320 (2001-01-01), Saito et al.
patent: 6448097 (2002-09-01), Singh et al.
patent: 6492075 (2002-12-01), Templeton et al.
patent: 6861209 (2005-03-01), Li et al.
patent: 6916594 (2005-07-01), Bok et al.
patent: 7310797 (2007-12-01), Huckaby
patent: 7338750 (2008-03-01), Kozawa et al.
patent: 7455952 (2008-11-01), Hatakeyama et al.
patent: 2006/0257749 (2006-11-01), Chang et al.
Burns Sean David
Colburn Matthew E.
Holmes Steven John
Huang Wu-Song
International Business Machines - Corporation
The Law Offices of Robert J. Eichelburg
Walke Amanda C.
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