Chemical treatment for preventing copper dendrite formation and

Details Chemical treatment for preventing copper dendrite formation and Chemical treatment for preventing copper dendrite formation and

1998-11-25

2000-12-19

Wilczewski, Mary

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438691, 438745, 438963, H01L 2144

Patent

active

061627275

ABSTRACT:
The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP with a solution comprising acetic acid and ammonium fluoride. Embodiments include removing up to 60 .ANG., e.g. about 10 .ANG. to about 30 .ANG., of silicon oxide by immersing the wafer in a solution containing at least about 90 wt. % acetic acid and up to about 10 wt. % ammonium fluoride.

REFERENCES:
patent: 4322264 (1982-03-01), Rioult et al.
patent: 4371423 (1983-02-01), Yoshizwaw et al.
patent: 5476816 (1995-12-01), Mautz et al.
patent: 5662769 (1997-09-01), Schonauer et al.
patent: 5693563 (1997-12-01), Teong
patent: 5949143 (1999-09-01), Bang
patent: 6010383 (2000-01-01), Knall

Affiliated with

Also associated with

Rating

Chemical treatment for preventing copper dendrite formation and does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chemical treatment for preventing copper dendrite formation and , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical treatment for preventing copper dendrite formation and will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-270890