Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier
Reexamination Certificate
2007-09-25
2007-09-25
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
C257S472000, C257S473000, C257S485000, C257S486000, C438S570000, C438S571000, C438S572000
Reexamination Certificate
active
11118189
ABSTRACT:
Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential for generation of unique electronic signatures for chemical reactions and the creation of a new class of solid state chemical sensors. Detention of the following chemical species was established: hydrogen, deuterium, carbon monoxide, and molecular oxygen. The detector (1b) consists of a Schottky diode between an Si layer and an ultrathin metal layer with zero force electrical contacts.
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Bergh Howard S.
Gergen Brian
McFarland Eric W.
Mujumdar Arunava
Nienhaus Hermann
Adrena, Inc.
Ho Hoang-Quan
Huynh Andy
O'Neil Michael A.
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