Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Reexamination Certificate
2009-03-26
2011-10-04
Warden, Jill (Department: 1773)
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
C438S014000, C438S018000, C422S082010, C422S082020, C422S082030, C422S083000, C422S098000, C977S815000, C977S880000, C977S902000, C977S920000, C977S921000, C436S149000, C436S150000, C436S151000, C073S023200, C073S023400, C073S024040, C073S029010, C073S031060
Reexamination Certificate
active
08030100
ABSTRACT:
The application relates to a chemical sensor device comprising a substrate (1), a sensor medium (3) formed on the substrate, the sensor medium comprising one-dimensional nanoparticles, wherein the one-dimensional nanoparticles essentially consist of a semiconducting AxBycompound, e.g. V2O5and detection means (2) for detecting a change of a physical property of the sensor medium e.g. conductivity. The porosity of the sensor medium supports a fast access of the analyte to the sensing material and therefore a fast response of the sensor. The selectivity and sensitivity of the sensor can be tailored by doping the one-dimensional nanoscale material with different dopants or by varying the dopant concentration. Sensitivity of the sensor device to an analyte, preferably an amine, can be increased by increasing relative humidity of the sample to at least 5%.
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Besnard Isabelle
Burghard Marko
Schlecht Ulrich
Vossmeyer Tobias
Yasuda Akio
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Sony Deutschland GmbH
Turk Neil N
Warden Jill
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