Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing
Reexamination Certificate
2007-08-31
2009-10-06
Kunemund, Robert M (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for measuring, testing, or sensing
C117S202000, C118S715000
Reexamination Certificate
active
07597758
ABSTRACT:
Embodiments of the invention provide chemical precursor ampoules that may be used during vapor deposition processes. In one embodiment, an apparatus for generating a chemical precursor gas used in a vapor deposition processing system is provided which includes a canister having a sidewall, a top, and a bottom forming an interior volume and a solid precursor material at least partially contained within a lower region of the interior volume. The apparatus further contains an inlet port and an outlet port in fluid communication with the interior volume and an inlet tube connected to the inlet port and positioned to direct a carrier gas towards the sidewall and away form the outlet port. In one example, the solid precursor contains pentakis(dimethylamido) tantalum (PDMAT). In another example, the apparatus contains a plurality of baffles that form an extended mean flow path between the inlet port and the outlet port.
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Chang Mei
Chen Ling
Chung Hua
Ganguli Seshadri
Ku Vincent W.
Applied Materials Inc.
Kunemund Robert M
Patterson & Sheridan LLP
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