Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-03-07
2008-08-05
Vu, Hung (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S624000, C438S631000, C438S645000, C438S725000
Reexamination Certificate
active
07407879
ABSTRACT:
An electrical interconnect structure on a substrate, which includes: a first low-k dielectric layer; a spin-on low k CMP protective layer that is covalently bonded to the first low-k dielectric layer; and a CVD deposited hardmask/CMP polish stop layer is provided. Electrical vias and lines can be formed in the first low k dielectric layer. The spin-on low k CMP protective layer prevents damage to the low k dielectric which can be created due to non-uniformity in the CMP process from center to edge or in areas of varying metal density. The thickness of the low-k CMP protective layer can be adjusted to accommodate larger variations in the CMP process without significantly impacting the effective dielectric constant of the structure.
REFERENCES:
patent: 5789819 (1998-08-01), Gnade et al.
patent: 6153511 (2000-11-01), Watatani
patent: 6177199 (2001-01-01), Hacker et al.
patent: 6218020 (2001-04-01), Hacker et al.
patent: 6265780 (2001-07-01), Yew et al.
patent: 6383920 (2002-05-01), Wang et al.
patent: 6660627 (2003-12-01), Hu et al.
patent: 6683002 (2004-01-01), Chooi et al.
patent: 6975033 (2005-12-01), Ito et al.
patent: 2001/0004550 (2001-06-01), Passemard
patent: WO 00/31183 (2000-06-01), None
patent: WO 02/083327 (2002-10-01), None
Nicholson Lee M
Tseng Wei-Tsu
Tyberg Christy S
International Business Machines - Corporation
Morris, Esq. Daniel P.
Ohlandt Greeley Ruggiero & Perle L.L.P.
Vu Hung
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