Chemical mechanical polishing stopper film, process for...

Details Chemical mechanical polishing stopper film, process for... Chemical mechanical polishing stopper film, process for...

2006-12-26

2006-12-26

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S633000, C438S692000, C438S693000

Reexamination Certificate

active

07153767

ABSTRACT:
A chemical mechanical polishing stopper film comprising at least one organic polymer, said film having a dielectric constant of 4 or lower, and a chemical mechanical polishing method. The chemical mechanical polishing method comprises forming a chemical mechanical polishing stopper film comprising at least one organic polymer on an insulating film so that the stopper film is interposed between the insulating film and a metal film to be removed by chemical mechanical polishing, and then removing the metal film with a chemical mechanical polishing slurry.

REFERENCES:
patent: 5976979 (1999-11-01), Chen
patent: 6342448 (2002-01-01), Lin et al.
patent: 6383933 (2002-05-01), Shu et al.
patent: 6452251 (2002-09-01), Bernstein et al.
patent: 6593239 (2003-07-01), Kaufman et al.
patent: WO 96/28491 (1996-09-01), None
patent: WO 98/33836 (1998-08-01), None
patent: WO 00/49647 (2000-08-01), None
U.S. Appl. No. 10/102,710, filed Mar. 22, 2002, Shinohara et al.

Affiliated with

Also associated with

Rating

Chemical mechanical polishing stopper film, process for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chemical mechanical polishing stopper film, process for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical mechanical polishing stopper film, process for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3696656