Chemical mechanical polishing slurry delivery and mixing system

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156626, 156645, H02N 21304, H01L 21306

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active

054075262

ABSTRACT:
A method and apparatus for mixing and delivering a slurry polishing and etching a semiconductor device is described wherein the slurry chemicals are mixed at the point of use. An abrasive solution and a oxidant solution are stored in separate storage containers. When the polish/etch is to begin, each of the chemicals are pumped into a mixing chamber where they are mixed so as to form a slurry. The slurry is then immediately used to polish/etch a semiconductor device. Other chemicals may be added to the slurry during the polish/etch process so as to change the polish and/or the etch rate during the polish/etch process.

REFERENCES:
patent: 4879258 (1989-11-01), Fisher
patent: 4944836 (1990-07-01), Beyer et al.
patent: 4954142 (1990-09-01), Carr et al.
F. B. Kaufman, D. B. Thompson, R. E. Broadie, M. A. Jaso, W. L. Guthrie, D. J. Pearson, & M. B. Small, "Chemical-Mechanical Polishing For Fabricating Patterned W Metal Features As Chip Interconnects", IBM Research Division, Thomas J. Watson Research Center, New York & IBM General Tech. Div., New York, J. Electrochem. Soc., vol. 138, No. 11, Nov. 1991 pp. 3460-3465.
William J. Patrick, William L. Guthrie, Charles L. Standley, & Paul M. Schiable, "Application Of Chemical Mechanical Polishing To The Fabrication Of VLSI Circuit Interconnections", IBM General Technology Division, New York, J. Electrochem Soc., vol. 138, No. 6, Jun. 1991, pp. 1778-1784.
T. A. Shankoff and E. A. Chandross, "High Resolution Tungsten Patterning Using Buffered, Mildly Basic Etching Solutions", Bell Laboratories, New Jersey, J. Electrochem Soc., vol. 122, No. 2, Feb. 1975, pp. 294-298.

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