Abrading – Abrading process – Utilizing fluent abradant
Reexamination Certificate
2005-03-08
2005-03-08
Eley, Timothy V. (Department: 3724)
Abrading
Abrading process
Utilizing fluent abradant
C051S298000, C051S309000
Reexamination Certificate
active
06863592
ABSTRACT:
CMP (chemical/mechanical polishing) slurries that can rapidly remove a target layer and can effectively passivate a polishing stopper, with high selectivity. In one aspect, a CMP slurry comprises metal oxide abrasive particles, a removal rate accelerator, an anionic polymeric passivation agent having a molecular weight in a range of about 1,000 to about 100,000, a C1-C12 anionic passivation agent, and water.
REFERENCES:
patent: 5759917 (1998-06-01), Grover et al.
patent: 6383934 (2002-05-01), Sabde et al.
patent: 6540935 (2003-04-01), Lee et al.
patent: 6733553 (2004-05-01), Kido et al.
patent: 20020098696 (2002-07-01), Sabde et al.
patent: 1148 538 (2001-10-01), None
patent: WO 9964527 (1999-12-01), None
Hong Chang-ki
Lee Jae-dong
Lee Jong-won
DeRosa, Esq. Frank V.
Eley Timothy V.
F. Chau & Associates LLC
Samsung Electronics Co,. Ltd.
LandOfFree
Chemical/mechanical polishing slurry and chemical mechanical... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Chemical/mechanical polishing slurry and chemical mechanical..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical/mechanical polishing slurry and chemical mechanical... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3366910