Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-07-05
2005-07-05
Goudreau, George A. (Department: 1763)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S424000, C438S693000, C216S088000, C216S089000
Reexamination Certificate
active
06914001
ABSTRACT:
A CMP oxide slurry includes an aqueous solution containing abrasive particles and two or more different passivation agents. Preferably, the aqueous solution is made up of deionized water, and the abrasive particles are a metal oxide selected from the group consisting of ceria, silica, alumina, titania, zirconia and germania. Also, a first passivation agent may be an anionic, cationic or nonionic surfactant, and a second passivation agent may be a phthalic acid and its salts. In one example, the first passivation agent is poly-vinyl sulfonic acid, and the second passivation agent is potassium hydrogen phthalate. The slurry exhibits a high oxide to silicon nitride removal selectivity.
REFERENCES:
patent: 5476606 (1995-12-01), Brancaleoni et al.
patent: 5759917 (1998-06-01), Grover et al.
patent: 5958794 (1999-09-01), Bruxvoort et al.
patent: 6042741 (2000-03-01), Hosali et al.
patent: 6217416 (2001-04-01), Kaufman et al.
patent: 6238592 (2001-05-01), Hardy et al.
patent: 6316365 (2001-11-01), Wang et al.
patent: 6447563 (2002-09-01), Mahulikar
patent: WO 00/024842 (2000-05-01), None
Hah Sang-rok
Lee Jae-dong
Lee Jong-won
Yoon Bo-un
Goudreau George A.
Samsung Electronics Co,. Ltd.
Volentine Francos & Whitt PLLC
LandOfFree
Chemical/mechanical polishing slurry, and chemical... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Chemical/mechanical polishing slurry, and chemical..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical/mechanical polishing slurry, and chemical... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3381125