Chemical mechanical polishing slurry

Details Chemical mechanical polishing slurry Chemical mechanical polishing slurry

2006-12-05

2006-12-05

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C252S079100, C252S079400

Reexamination Certificate

active

07144815

ABSTRACT:
A polishing slurry including an abrasive, deionized water, a pH controlling agent, and polyethylene imine, can control the removal rates of a silicon oxide layer and a silicon nitride layer which are simultaneously exposed during chemical mechanical polishing (CMP) of a conductive layer. A relative ratio of the removal rate of the silicon oxide layer to that of the silicon nitride layer can be controlled by controlling an amount of the choline derivative.

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patent: 6354913 (2002-03-01), Miyashita et al.
patent: 6855267 (2005-02-01), Lee et al.
patent: P1998-063482 (1998-10-01), None

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