Chemical mechanical polishing slurry

Details Chemical mechanical polishing slurry Chemical mechanical polishing slurry

2005-02-15

2005-02-15

Norton, Nadine (Department: 1765)

Compositions

Etching or brightening compositions

C252S079400, C438S692000

Reexamination Certificate

active

06855267

ABSTRACT:
A polishing slurry including an abrasive, deionized water, a pH controlling agent, and polyethylene imine, can control the removal rates of a silicon oxide layer and a silicon nitride layer which are simultaneously exposed during chemical mechanical polishing (CMP) of a conductive layer. A relative ratio of the removal rate of the silicon oxide layer to that of the silicon nitride layer can be controlled by controlling an amount of the choline derivative.

REFERENCES:
patent: 5607718 (1997-03-01), Sasaki et al.
patent: 5869392 (1999-02-01), Kimura
patent: 6132637 (2000-10-01), Hosali et al.
patent: 6354913 (2002-03-01), Miyashita et al.
patent: P1998-063482 (1998-10-01), None

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