Chemical-mechanical polishing salt slurry

Abrading – Abrading process

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Details

451 41, B24B 100, B24B 719, B24B 730

Patent

active

056953844

ABSTRACT:
An improved slurry composition and method of polishing a workpiece are disclosed. This composition allows use of a neutral pH slurry for chemical-mechanical polishing many surfaces. One disclosed composition comprises 85% water, 4% NaCl, 4% H.sub.2 O.sub.2, and 7% colloidal silica. It has been found that such a slurry produces a high material removal rate for barium strontium titanate (BST) polishing, without damage to the surface of the BST workpiece commonly found with other slurry compositions. This slurry has been found to also polish diamond, silicon carbide, gallium arsenide, and many other difficult-to-polish materials.

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Peroxide Polishing of Semiconductor Wafers to Sub-nm Finish, Department of Chemistry, University of Glasgow, Logitech Ltd. Ershine Ferry Road, Old Kilpatrick, Glasgow G60 5 EU, Scotland, UK.

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