Chemical-mechanical polishing proximity correction method...

Details Chemical-mechanical polishing proximity correction method... Chemical-mechanical polishing proximity correction method...

2006-11-21

2006-11-21

Vinh, Lan (Department: 1765)

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

C257S052000, C438S692000, C451S241000

Reexamination Certificate

active

07138654

ABSTRACT:
A chemical-mechanical polishing (CMP) proximity correction method for polishing a wafer is provided. The wafer has a polish area and a protected area. The method includes forming a material layer over the wafer to cover the polish area and the protected area and then forming a protective layer over the material layer. Thereafter, the protective layer is patterned so that the remaining protective layer is at a distance away from the boundary of the polish area to reduce shadowing effects. Because the boundary of the protective layer above the material layer recedes to an area at a distance away from polish area, the whole polish area can be cleanly polished.

REFERENCES:
patent: 6759345 (2004-07-01), Kawano

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