Chemical mechanical polishing process for layers of isolating ma

Details Chemical mechanical polishing process for layers of isolating ma Chemical mechanical polishing process for layers of isolating ma

1997-09-30

2000-03-28

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

216 38, 216 89, H01L 21304

Patent

active

060431598

ABSTRACT:
Process for the chemical mechanical polishing of a layer of isolating material based on silicon or a silicon derivative, in which abrasion of the layer of isolating material is carried out by rubbing said layer using a fabric which brings into play an abrasive containing an acid aqueous solution of colloidal silica containing individualized colloidal silica particles, not linked together by siloxane bonds, and water as the suspension medium and new abrasives based on such suspensions.

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patent: 5575837 (1996-11-01), Kodama et al.
patent: 5769689 (1998-06-01), Cossaboon et al.

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