Chemical mechanical polishing process for forming shallow...

Details Chemical mechanical polishing process for forming shallow... Chemical mechanical polishing process for forming shallow...

2007-11-13

2007-11-13

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S691000, C438S690000, C438S693000

Reexamination Certificate

active

10752362

ABSTRACT:
A shallow trench isolation (STI) multistage chemical mechanical polishing (CMP) method for forming a shallow trench isolation structure is provided. The substrate comprising a dense region and an isolation region, a silicon nitride layer formed over the substrate, a plurality of trenches formed in the silicon nitride layer and the substrate, an oxide layer formed over the substrate, filling the trenches, wherein a width of the trenches in the dense region is smaller than that in the isolation region. A first polishing step is performed to remove a portion of the silicon oxide layer until a thickness of the remaining portion of the oxide layer reaches a predetermined thickness. A second polishing step is performed to remove a portion of the remaining portion of the silicon oxide layer until the silicon nitride layer is exposed.

REFERENCES:
patent: 6019806 (2000-02-01), Sees et al.
patent: 6593240 (2003-07-01), Page
patent: 6910951 (2005-06-01), Balijepalli et al.
patent: 2002/0019202 (2002-02-01), Thomas et al.
patent: 2003/0176151 (2003-09-01), Tam et al.
Simpson: STI Planarization using Fixed Abrasive Technology; Feb. 2002; Future Fab International, vol. 12.

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