Chemical mechanical polishing pad and chemical mechanical...

Details Chemical mechanical polishing pad and chemical mechanical... Chemical mechanical polishing pad and chemical mechanical...

2008-04-08

2008-04-08

Norton, Nadine (Department: 1792)

Etching a substrate: processes

Nongaseous phase etching of substrate

Using film of etchant between a stationary surface and a...

C216S091000, C438S626000, C438S692000, C438S697000, C451S527000, C451S533000, C451S539000, C451S548000, C451S550000

Reexamination Certificate

active

11219843

ABSTRACT:
A chemical mechanical polishing pad which has a storage elastic modulus E′(30° C.) at 30° C. of 120 MPa or less and an (E′(30° C.)/E′(60° C.)) ratio of the storage elastic modulus E′(30° C.) at 30° C. to the storage elastic modulus E′(60° C.) at 60° C. of 2.5 or more when the storage elastic moduli of a polishing substrate at 30° C. and 60° C. are measured under the following conditions:initial load: 100 gmaximum bias: 0.01 %frequency: 0.2 Hz.A chemical mechanical polishing process makes use of the above chemical mechanical polishing pad. The chemical mechanical polishing pad can suppress the production of a scratch on the polished surface in the chemical mechanical polishing step and can provide a high-quality polished surface, and the chemical mechanical polishing process provides a high-quality polished surface by using the chemical mechanical polishing pad.

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