Chemical mechanical polishing optical endpoint detection

Details Chemical mechanical polishing optical endpoint detection Chemical mechanical polishing optical endpoint detection

2005-05-24

2005-05-24

Morgan, Eileen P. (Department: 3723)

Abrading

Precision device or process - or with condition responsive...

With indicating

C451S010000, C451S011000, C451S041000, C451S054000

Reexamination Certificate

active

06896588

ABSTRACT:
Light is incident on a semiconductor wafer polish surface and an adjacent reference surface (80). The reflected light from each surface is detected by a detector (35) positioned beneath the surfaces. The signals derived from each source of reflected light is analyzed in a electronic system (37) and an endpoint for a chemical mechanical polish process is determined as a function of both signals.

REFERENCES:
patent: 5722875 (1998-03-01), Iwashita et al.
patent: 6271047 (2001-08-01), Ushio et al.
patent: 6628410 (2003-09-01), Doan
patent: 6670200 (2003-12-01), Ushio et al.
patent: 6679756 (2004-01-01), Ishikawa et al.

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