Chemical-mechanical polishing of thin materials using a pulse po

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

216 88, 451287, H01L 21304

Patent

active

054862655

ABSTRACT:
Uniform chemical-mechanical planarization is achieved at a high material removal rate by pulsing the pressure applied to the wafer undergoing planarization between an initial optimum pressure and a reduced second pressure, preferably about 0 psi.

REFERENCES:
patent: 3841031 (1974-10-01), Walsh
patent: 3911562 (1975-10-01), Youmans
patent: 4193226 (1980-03-01), Gill, Jr. et al.
patent: 4811522 (1989-03-01), Gill, Jr.
patent: 4944836 (1990-07-01), Beyer et al.
patent: 5069002 (1991-12-01), Sandhu
patent: 5081795 (1992-01-01), Tanaka
patent: 5245794 (1993-09-01), Salugsugan

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Chemical-mechanical polishing of thin materials using a pulse po does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chemical-mechanical polishing of thin materials using a pulse po, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical-mechanical polishing of thin materials using a pulse po will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1502823

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.