Chemical-mechanical polishing of semiconductor wafers

Details Chemical-mechanical polishing of semiconductor wafers Chemical-mechanical polishing of semiconductor wafers

1997-09-30

1999-12-28

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438638, 438693, 438747, H01L 214763

Patent

active

060081198

ABSTRACT:
A chemical mechanical polishing process in a wafer is polished with slurry under selected operating conditions for a first time period that avoids overpolishing; and then polished with DI water under the selected operating conditions for a second time period until the surface of the wafer is substantially planar and dishing is minimized. The process can be used in conjunction with a damascene or dual-damascene process in which tungsten is polished with respect to BPSG.

REFERENCES:
patent: 4956313 (1990-09-01), Cote
patent: 5551986 (1996-09-01), Jain
patent: 5702563 (1997-12-01), Salugsugan
patent: 5726099 (1998-03-01), Jaso

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